? 2017 ixys corporation, all rights reserved. IXYH10N170CV1 v ces = 1700v i c110 = 10a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 3.8v t fi(typ) = 70ns ds100784(1/17) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 1700 v v ge(th) i c = 250 ? a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 150 ? c 5 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 10a, v ge = 15v, note 1 3.2 3.8 v t j = 150 ? c 4.4 v symbol test conditions maximum ratings v ces t j = 25c to 175c 1700 v v cgr t j = 25c to 175c, r ge = 1m ? 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 36 a i c110 t c = 110c 10 a i f110 t c = 110c 22 a i cm t c = 25c, 1ms 84 a ssoa v ge = 15v, t vj = 150c, r g = 10 ? i cm = 40 a (rbsoa) clamped inductive load 1360 v p c t c = 25c 280 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g high voltage xpt tm igbt w/ diode advance technical information features ? high voltage package ? high blocking voltage ? low saturation voltage advantages ? low gate drive requirement ? high power density applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? laser generators ? capacitor discharge circuits ? ac switches
ixys reserves the right to change limits, test conditions, and dimensions. IXYH10N170CV1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . reverse diode (fred) (t j = 25c, unless otherwise specified) characteristic value symbol test conditions min. typ. max. v f 3.0 v t j = 150c 2.4 v i rm 18 a t rr 160 ns r thjc 0.70 c/w i f = 10a,v ge = 0v, -di f /dt = 400a/ s, v r = 1200v, t j = 150c i f = 10a,v ge = 0v, note 1 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 10a, v ce = 10v, note 1 5.4 9.0 s r gi gate input resistance 10 ? c ie s 930 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 74 pf c res 20 pf q g(on) 46 nc q ge i c = 10a, v ge = 15v, v ce = 0.5 ? v ces 6 nc q gc 22 nc t d(on) 14 ns t ri 17 ns e on 1.4 mj t d(off) 130 ns t fi 70 ns e of f 0.7 mj t d(on) 15 ns t ri 6 ns e on 2.3 mj t d(off) 166 ns t fi 94 ns e off 0.9 mj r thjc 0.53 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 10a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 inductive load, t j = 150c i c = 10a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 1 - gate 2,4 - collector 3 - emitter to-247 (ixyh) outline 3 d s a l d r e e1 l1 d1 d2 a2 q c b a 0p 0k m d b m b4 0p1 1 2 4 b c e ixys option r1 r1 r1 r1 j m c a m b2 a1
? 2017 ixys corporation, all rights reserved. IXYH10N170CV1 fig. 1. output characteristics @ t j = 25oc 0 2 4 6 8 10 12 14 16 18 20 00.511.522.533.544.555.56 v ce - volts i c - amperes v ge = 15v 12v 10v 9v 8v 7v 6v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 10v 8v 11v 12v 7v 6v 9v 14v 13v fig. 3. output characteristics @ t j = 150oc 0 2 4 6 8 10 12 14 16 18 20 012345678 v ce - volts i c - amperes 8v v ge = 15v 12v 10v 9v 5v 6v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 10a i c = 5a i c = 20a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 8 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 20a t j = 25oc 10a 5a fig. 6. input admittance 0 3 6 9 12 15 18 21 24 27 30 33 36 4.04.55.05.56.06.57.07.58.08.59.09.5 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH10N170CV1 fig. 7. transconductance 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 5 10 15 20 25 30 35 40 45 200 400 600 800 1000 1200 1400 1600 1800 v ce - volts i c - amperes t j = 150oc r g = 10 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v ge - volts v ce = 850v i c = 10a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance (igbt) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - k / w
? 2017 ixys corporation, all rights reserved. IXYH10N170CV1 fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 20 30 40 50 60 70 80 r g - ohms e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on t j = 150oc , v ge = 15v v ce = 850v i c = 10a i c = 20a fig. 15. inductive turn-off switching times vs. gate resistance 70 80 90 100 110 120 130 10 20 30 40 50 60 70 80 r g - ohms t f i - nanoseconds 0 100 200 300 400 500 600 t d(off) - nanoseconds t f i t d(off) t j = 150oc, v ge = 15v v ce = 850v i c = 10a i c = 20a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 12 14 16 18 20 22 24 26 28 30 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on r g = 10 ? ????? v ge = 15v v ce = 850v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 e on - millijoules e off e on r g = 10 ? ???? v ge = 15v v ce = 850v i c = 10a i c = 20a fig. 16. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 120 140 160 10 12 14 16 18 20 22 24 26 28 30 i c - amperes t f i - nanoseconds 60 80 100 120 140 160 180 200 220 t d(off) - nanoseconds t f i t d(off) r g = 10 ? ? , v ge = 15v v ce = 850v t j = 150oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 80 100 120 140 160 180 200 t d(off) - nanoseconds t f i t d(off) r g = 10 ? ? , v ge = 15v v ce = 850v i c = 20a i c = 10a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH10N170CV1 ixys ref: ixy_10n170c(3t-at653) 1-26-17 fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 10 12 14 16 18 20 22 24 26 28 30 i c - amperes t r i - nanoseconds 12 13 14 15 16 17 t d(on) - nanoseconds t r i t d(on) r g = 10 ? ? , v ge = 15v v ce = 850v t j = 25oc t j = 150oc fig. 20. inductive turn-on switching times vs. junction temperature 0 5 10 15 20 25 30 35 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 11 12 13 14 15 16 17 18 t d(on) - nanoseconds t r i t d(on) r g = 10 ? ? , v ge = 15v v ce = 850v i c = 20a i c = 10a fig. 18. inductive turn-on switching times vs. gate resistance 0 10 20 30 40 50 60 10 20 30 40 50 60 70 80 r g - ohms t r i - nanoseconds 10 15 20 25 30 35 40 t d(on) - nanoseconds t r i t d(on) t j = 150oc, v ge = 15v v ce = 850v i c = 10a i c = 20a
? 2017 ixys corporation, all rights reserved. IXYH10N170CV1 fig. 21. diode forward characteristics 0 10 20 30 40 50 0123456 v f (v) i f (a) t j = 150oc t j = 25oc fig. 22. reverse recovery charge vs. -di f /dt 0.6 1.0 1.4 1.8 2.2 2.6 200 400 600 800 1000 1200 1400 1600 -di f / dt (a/s) q rr (c) i f = 20a 10a 15a t j = 150oc v r = 1200v fig. 23. reverse recovery current vs. -di f /dt 10 15 20 25 30 35 200 400 600 800 1000 1200 1400 1600 di f /dt (a/s) i rr (a) 10a 15a i f = 20a t j = 150oc v r = 1200v fig. 24. reverse recovery time vs. -di f /dt 100 120 140 160 180 200 200 400 600 800 1000 1200 1400 1600 -di f /dt (a/s) t rr (ns) 10a 15a i f = 20a t j = 150oc v r = 1200v fig. 26. maximum transient thermal impedance (diode) 0.1 1 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - k / w fig. 25. dynamic parameters q rr, i rr vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 0 20 40 60 80 100 120 140 160 t j (oc) k f k f i rr k f q rr v r = 1200v i f = 10a -dif/dt = 400a/s
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